Datasheet4U Logo Datasheet4U.com

MTD010P03V8 - P-Channel Enhancement Mode Power MOSFET

Key Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free lead plating package BVDSS ID@ TC=25°C, VGS=-10V ID@ TA=25°C, VGS=-10V RDSON(MAX)@VGS=-10V, ID=-9A RDSON(MAX)@VGS=-4.5V, ID=-5A -30V -40A -10A 11mΩ(typ. ) 16mΩ(typ. ) Equivalent Circuit MTD010P03V8 Outline Pin 1 DFN3×3 G：Gate S：Source D：Drain Ordering Information Device MTD010P03V8-0-T6-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape &.

📥 Download Datasheet

Datasheet Details

Part number MTD010P03V8
Manufacturer Cystech Electonics
File Size 357.93 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTD010P03V8 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MTD-0208N Tunnel Diode Detectors Aeroflex
MTD-0218N Tunnel Diode Detectors Aeroflex
MTD-0818N Tunnel Diode Detectors Aeroflex
MTD-1002N Tunnel Diode Detectors Aeroflex
MTD-160 PHASE CONTROL THYRISTOR ELECTROVIPRYAMITEL

Other Datasheets by Cystech Electonics

Part Number Description
MTD011N10RH8 N-Channel Enhancement Mode Power MOSFET
MTD011N10RJ3 N-Channel Enhancement Mode Power MOSFET
MTD011N10RQ8 N-Channel Enhancement Mode Power MOSFET
MTD015P10E3 P-Channel Enhancement Mode Power MOSFET
MTD030N10QJ3 N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET MTD010P03V8 Spec. No. : C391V8 Issued Date : 2016.11.24 Revised Date : Page No. : 1/10 Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating package BVDSS ID@ TC=25°C, VGS=-10V ID@ TA=25°C, VGS=-10V RDSON(MAX)@VGS=-10V, ID=-9A RDSON(MAX)@VGS=-4.5V, ID=-5A -30V -40A -10A 11mΩ(typ.) 16mΩ(typ.