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MTD015P10E3 - P-Channel Enhancement Mode Power MOSFET

Key Features

  • Simple Drive Requirement.
  • Repetitive Avalanche Rated.
  • Fast Switching Characteristic.
  • RoHS compliant package RDSON(TYP) @ VGS=-4.5V, ID=-15A -100V -107A -8.6A 11.6mΩ 13.7mΩ Symbol MTD015P10E3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device Package Shipping MTD015P10E3-0-UB-X TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for Ro.

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Datasheet Details

Part number MTD015P10E3
Manufacturer Cystech Electonics
File Size 317.06 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTD015P10E3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C159F3 Issued Date : 2016.11.02 Revised Date : Page No. : 1/8 P-Channel Enhancement Mode Power MOSFET MTD015P10E3 BVDSS ID @ VGS=-10V, TC=25°C ID @ VGS=-10V, TA=25°C RDSON(TYP) @ VGS=-10V, ID=-20A Features • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package RDSON(TYP) @ VGS=-4.5V, ID=-15A -100V -107A -8.6A 11.6mΩ 13.