• Part: MTD015P10E3
  • Description: P-Channel Enhancement Mode Power MOSFET
  • Manufacturer: Cystech Electonics
  • Size: 317.06 KB
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Datasheet Summary

CYStech Electronics Corp. Spec. No. : C159F3 Issued Date : 2016.11.02 Revised Date : Page No. : 1/8 P-Channel Enhancement Mode Power MOSFET BVDSS ID @ VGS=-10V, TC=25°C ID @ VGS=-10V, TA=25°C RDSON(TYP) @ VGS=-10V, ID=-20A Features - Simple Drive Requirement - Repetitive Avalanche Rated - Fast Switching Characteristic - RoHS pliant package RDSON(TYP) @ VGS=-4.5V, ID=-15A -100V -107A -8.6A 11.6mΩ 13.7mΩ Symbol Outline TO-220 G:Gate D:Drain S:Source Ordering Information Device Package Shipping MTD015P10E3-0-UB-X TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS...