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MTD011N10RJ3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=11A RDS(ON)@VGS=6V, ID=6A 100V 48A 10.6A 8.4 mΩ(typ) 9.4 mΩ(typ) Symbol MTD011N10RJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTD011N10RJ3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free pa.

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Datasheet Details

Part number MTD011N10RJ3
Manufacturer Cystech Electonics
File Size 364.65 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTD011N10RJ3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTD011N10RJ3 Spec. No. : C169J3 Issued Date : 2016.07.27 Revised Date : Page No. : 1/ 9 Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=11A RDS(ON)@VGS=6V, ID=6A 100V 48A 10.6A 8.4 mΩ(typ) 9.