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MTD011N10RH8 Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: Cystech Electonics

Overview: CYStech Electronics Corp. Spec. No. : C169H8 Issued Date : 2015.11.23 Revised Date : 2016.04.27 Page No.

Datasheet Details

Part number MTD011N10RH8
Manufacturer Cystech Electonics
File Size 583.93 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet MTD011N10RH8-CystechElectonics.pdf

Key Features

  • BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C VGS=10V, ID=11.5A RDSON(TYP) VGS=4.5V, ID=9.5A 100V 45A 13.8A 9.2mΩ 12.8mΩ.
  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Repetitive Avalanche Rated.
  • Pb-free lead plating and Halogen-free package Symbol MTD011N10RH8 Outline Pin 1 DFN5×6 G:Gate D:Drain S:Source Ordering Information Device MTD011N10RH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000.

MTD011N10RH8 Distributor