Datasheet Summary
CYStech Electronics Corp.
Spec. No. : C169H8 Issued Date : 2015.11.23 Revised Date : 2016.04.27 Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
Features
BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C
VGS=10V, ID=11.5A RDSON(TYP)
VGS=4.5V, ID=9.5A
100V 45A 13.8A 9.2mΩ 12.8mΩ
- Single Drive Requirement
- Low On-resistance
- Fast Switching Characteristic
- Repetitive Avalanche Rated
- Pb-free lead plating and Halogen-free package
Symbol
Outline
Pin 1
DFN5×6
G：Gate D：Drain S：Source
Ordering Information
Device MTD011N10RH8-0-T6-G
Package DFN 5 ×6 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / tape & reel
Environment friendly...