MTD011N10RH8 - N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Key Features

BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C VGS=10V, ID=11.5A RDSON(TYP) VGS=4.5V, ID=9.5A 100V 45A 13.8A 9.2mΩ 12.8mΩ.
Single Drive Requirement.
Low On-resistance.
Fast Switching Characteristic.
Repetitive Avalanche Rated.
Pb-free lead plating and Halogen-free package Symbol MTD011N10RH8 Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source Ordering Information Device MTD011N10RH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000.

MTD011N10RH8 n-channel enhancement mode power mosfet by Cystech Electonics - Datasheet Preview

Datasheet Details

Part number	MTD011N10RH8
Manufacturer	Cystech Electonics
File Size	583.93 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTD011N10RH8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C169H8 Issued Date : 2015.11.23 Revised Date : 2016.04.27 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTD011N10RH8 Features BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C VGS=10V, ID=11.5A RDSON(TYP) VGS=4.5V, ID=9.5A 100V 45A 13.8A 9.2mΩ 12.