Datasheet4U Logo Datasheet4U.com

MTE115P10KQ8 - P-Channel Enhancement Mode MOSFET

Key Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • ESD protected gate.
  • Pb-free and Halogen-free package BVDSS ID@VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-2A RDSON@VGS=-6V, ID=-2A -100V -3.7A 97mΩ(typ) 113mΩ(typ) Equivalent Circuit MTE115P10KQ8 Outline SOP-8 G：Gate S：Source D：Drain Ordering Information Device MTE115P10KQ8-0-T3-G Package SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environ.

📥 Download Datasheet

Datasheet Details

Part number MTE115P10KQ8
Manufacturer Cystech Electonics
File Size 616.46 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTE115P10KQ8 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MTE1100 INFRARED LED Marktech Corporate
MTE1122 Energy Management Controller IC Microchip Technology
MTE100N10KRH8 N-Channel Enhancement Mode Power MOSFET CYStech
MTE1011P Metal Can Infrarred Emitter Marktech Corporate
MTE1040 INFRARED LED Marktech Corporate

Other Datasheets by Cystech Electonics

Part Number Description
MTE110P10KQ8 P-Channel Enhancement Mode MOSFET
MTE130N20F3 N-Channel Enhancement Mode Power MOSFET
MTE1K0P25J3 P-Channel Enhancement Mode MOSFET
MTE010N10E3 N-Channel Enhancement Mode Power MOSFET
MTE010N10F3 N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. Spec. No. : C165Q8 Issued Date : 2015.09.24 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTE115P10KQ8 Features • Simple drive requirement • Low on-resistance • Fast switching speed • ESD protected gate • Pb-free and Halogen-free package BVDSS ID@VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-2A RDSON@VGS=-6V, ID=-2A -100V -3.