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MTE010N10F3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Repetitive Avalanche Rated.
  • Fast Switching Characteristic.
  • RoHS compliant package 100V 70A 9.6mΩ 10.1mΩ Symbol MTE010N10F3 Outline TO-263 G：Gate D：Drain S：Source G DS Ordering Information Device Package Shipping MTE010N10F3-0-T7-X TO-263 (Pb-free lead plating and RoHS compliant package) 800 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and gr.

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Datasheet Details

Part number MTE010N10F3
Manufacturer Cystech Electonics
File Size 322.05 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE010N10F3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C944F3 Issued Date : 2014.06.09 Revised Date : 2015.09.04 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTE010N10F3 BVDSS ID@ TC=25°C, VGS=10V (silicon limit) RDSON(TYP) @ VGS=10V, ID=50A RDSON(TYP) @ VGS=7V, ID=20A Features • Low Gate Charge • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package 100V 70A 9.6mΩ 10.