MTE010N10F3
MTE010N10F3 is manufactured by Cystech Electonics.
CYStech Electronics Corp.
Spec. No. : C944F3 Issued Date : 2014.06.09 Revised Date : 2015.09.04 Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTE010N10F3 BVDSS ID@ TC=25°C, VGS=10V (silicon limit)
RDSON(TYP) @ VGS=10V, ID=50A
RDSON(TYP) @ VGS=7V, ID=20A
Features
- Low Gate Charge
- Simple Drive Requirement
- Repetitive Avalanche Rated
- Fast Switching Characteristic
- RoHS pliant package
100V
70A 9.6mΩ 10.1mΩ
Symbol
Outline
TO-263
G：Gate D：Drain S：Source
G DS
Ordering Information
Device
Package
Shipping
MTE010N10F3-0-T7-X
TO-263 (Pb-free lead plating and RoHS pliant package)
800 pcs / Tape & Reel
Environment friendly grade : S for RoHS pliant...
