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MTE010N10FP - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • Insulating package, front/back side insulating voltage=2500V(AC).
  • RoHS compliant package Symbol MTE010N10FP Outline TO-220FP G:Gate D:Drain S:Source GDS Ordering Information Device MTE010N10FP-0-UB-S Package TO-220FP (RoHS compliant package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS complia.

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Datasheet Details

Part number MTE010N10FP
Manufacturer Cystech Electonics
File Size 246.75 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE010N10FP Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C944FP Issued Date : 2014.01.14 Revised Date : Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTE010N10FP BVDSS ID @ VGS=10V RDSON(TYP) @ VGS=10V, ID=20A RDSON(TYP) @ VGS=7V, ID=20A 100V 35A 9.9mΩ 10.