MTE011N10RFP Description
CYStech Electronics Corp. 2015.12.01 Revised Date : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTE011N10RFP BVDSS.
MTE011N10RFP Key Features
- Low On Resistance
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching Characteristic
- Insulating package, front/back side insulating voltage=2500V(AC)
- RoHS pliant package