Datasheet Details
| Part number | MTE011N10RFP |
|---|---|
| Manufacturer | Cystech Electonics |
| File Size | 537.75 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 MTE011N10RFP Datasheet
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Key Features
- ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C.
- Low On Resistance RDS(ON)@VGS=10V, ID=11A.
- Simple Drive Requirement.
- Low Gate Charge.
- Fast Switching Characteristic.
- Insulating package, front/back side insulating voltage=2500V(AC).
- RoHS compliant package 100V 34A 9A 11 mΩ(typ) Symbol MTE011N10RFP Outline TO-220FP G：Gate D：Drain S：Source GDS Ordering Information Device MTE011N10RFP-0-UB-S Package TO-220FP (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box,.