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MTE011N10RFP Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: Cystech Electonics

Overview: CYStech Electronics Corp. Spec. No. : C169FP Issued Date : 2015.12.01 Revised Date : 2016.04.27 Page No.

Datasheet Details

Part number MTE011N10RFP
Manufacturer Cystech Electonics
File Size 537.75 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet MTE011N10RFP-CystechElectonics.pdf

Key Features

  • ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C.
  • Low On Resistance RDS(ON)@VGS=10V, ID=11A.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • Insulating package, front/back side insulating voltage=2500V(AC).
  • RoHS compliant package 100V 34A 9A 11 mΩ(typ) Symbol MTE011N10RFP Outline TO-220FP G：Gate D：Drain S：Source GDS Ordering Information Device MTE011N10RFP-0-UB-S Package TO-220FP (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box,.

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