• Part: MTE011N10RFP
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Manufacturer: Cystech Electonics
  • Size: 537.75 KB
Download MTE011N10RFP Datasheet PDF
Cystech Electonics
MTE011N10RFP
MTE011N10RFP is manufactured by Cystech Electonics.
CYStech Electronics Corp. Spec. No. : C169FP Issued Date : 2015.12.01 Revised Date : 2016.04.27 Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET BVDSS Features ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C - Low On Resistance RDS(ON)@VGS=10V, ID=11A - Simple Drive Requirement - Low Gate Charge - Fast Switching Characteristic - Insulating package, front/back side insulating voltage=2500V(AC) - RoHS pliant package 100V 34A 9A 11 mΩ(typ) Symbol Outline TO-220FP G:Gate D:Drain S:Source Ordering Information Device MTE011N10RFP-0-UB-S Package TO-220FP (RoHS pliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly...