MTE011N10RJ3
MTE011N10RJ3 is manufactured by Cystech Electonics.
CYStech Electronics Corp.
Spec. No. : C169J3 Issued Date : 2016.03.09 Revised Date : 2016.04.27 Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
Features
- Low On Resistance
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching Characteristic
- Pb-free lead plating and halogen-free package
BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=11A
100V 48A
10.6A 10 mΩ(typ)
Symbol
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G DS
Ordering Information
Device
Package
Shipping
MTE011N10RJ3-0-T3-G
TO-252 (Pb-free lead plating and halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS pliant...
