Datasheet4U Logo Datasheet4U.com

MTE011N10RJ3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=11A 100V 48A 10.6A 10 mΩ(typ) Symbol MTE011N10RJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device Package Shipping MTE011N10RJ3-0-T3-G TO-252 (Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel Environment.

📥 Download Datasheet

Datasheet Details

Part number MTE011N10RJ3
Manufacturer Cystech Electonics
File Size 550.65 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE011N10RJ3 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MTE030N15RH8 N-Channel Enhancement Mode Power MOSFET CYStech Electronics
MTE100N10KRH8 N-Channel Enhancement Mode Power MOSFET CYStech
MTE1011P Metal Can Infrarred Emitter Marktech Corporate
MTE1040 INFRARED LED Marktech Corporate
MTE1050A INFRARED LED Marktech Corporate

Other Datasheets by Cystech Electonics

Part Number Description
MTE011N10RE3 N-Channel Enhancement Mode Power MOSFET
MTE011N10RFP N-Channel Enhancement Mode Power MOSFET
MTE011N10RH8 N-Channel Enhancement Mode Power MOSFET
MTE010N10E3 N-Channel Enhancement Mode Power MOSFET
MTE010N10F3 N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. Spec. No. : C169J3 Issued Date : 2016.03.09 Revised Date : 2016.04.27 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTE011N10RJ3 Features  Low On Resistance  Simple Drive Requirement  Low Gate Charge  Fast Switching Characteristic  Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=11A 100V 48A 10.