Datasheet Details
| Part number | MTE011N10RE3 |
|---|---|
| Manufacturer | Cystech Electonics |
| File Size | 525.54 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 MTE011N10RE3 Datasheet
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Key Features
- Low On Resistance.
- Simple Drive Requirement.
- Low Gate Charge.
- Fast Switching Characteristic.
- RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=11A 100V 58A 9A 11 mΩ(typ) Symbol MTE011N10RE3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device MTE011N10RE3-0-UB-X Package TO-220 (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products.