MTE010N10E3 Description
CYStech Electronics Corp. 2013.11.12 Revised Date.
MTE010N10E3 Key Features
- Low Gate Charge
- Simple Drive Requirement
- Repetitive Avalanche Rated
- Fast Switching Characteristic
- RoHS pliant package
- Part: MTE010N10E3
- Manufacturer: Cystech Electonics
- Size: 230.52 KB
Related Cystech Electonics Datasheets
| Part Number | Description |
|---|---|
| MTE010N10F3 | N-Channel Enhancement Mode Power MOSFET |
| MTE010N10FP | N-Channel Enhancement Mode Power MOSFET |
| MTE011N10RE3 | N-Channel Enhancement Mode Power MOSFET |
| MTE011N10RFP | N-Channel Enhancement Mode Power MOSFET |
| MTE011N10RH8 | N-Channel Enhancement Mode Power MOSFET |