MTE010N10E3
MTE010N10E3 is manufactured by Cystech Electonics.
CYStech Electronics Corp.
Spec. No. : C944E3 Issued Date : 2013.11.12 Revised Date : Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTE010N10E3 BVDSS ID
RDSON(TYP) @ VGS=10V, ID=50A
RDSON(TYP) @ VGS=7V, ID=20A
100V 70A 9.6mΩ 10.1mΩ
Features
- Low Gate Charge
- Simple Drive Requirement
- Repetitive Avalanche Rated
- Fast Switching Characteristic
- RoHS pliant package
Symbol
Outline
TO-220
G：Gate D：Drain S：Source
Ordering Information
Device
Package
MTE010N10E3-0-UB-S
TO-220 (Pb-free lead plating package)
Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS pliant products, G for RoHS pliant and green pound...
