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MTE010N10E3 Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: Cystech Electonics

Overview: CYStech Electronics Corp. Spec. No. : C944E3 Issued Date : 2013.11.12 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTE010N10E3 BVDSS ID RDSON(TYP) @ VGS=10V, ID=50A RDSON(TYP) @ VGS=7V, ID=20A 100V 70A 9.6mΩ 10.

Datasheet Details

Part number MTE010N10E3
Manufacturer Cystech Electonics
File Size 230.52 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet MTE010N10E3-CystechElectonics.pdf

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Repetitive Avalanche Rated.
  • Fast Switching Characteristic.
  • RoHS compliant package Symbol MTE010N10E3 Outline TO-220 G：Gate D：Drain S：Source Ordering Information Device Package MTE010N10E3-0-UB-S TO-220 (Pb-free lead plating package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packin.

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