MTE011N10RH8 Datasheet | Cystech Electonics

CYStech Electronics Corp. Spec. No. : C169H8 Issued Date : 2016.07.05 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTE011N10RH8 BVDSS 100V ID@VGS=10V, TC=25°C 45A ID@VGS=10V, TA=25°C 15A RDSON(TYP) VGS=10V, ID=11.5A 9.5mΩ Features - Single Drive Requirement - Low On-resistance - Fast Switching Characteristic - Repetitive Avalanche Rated - Pb-free lead plating and Halogen-free package Symbol G：Gate D：Drain S：Source Outline Pin 1 DFN5×6 Pin 1 Ordering Information Device MTE011N10RH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment...