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MTE011N10RH8 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Repetitive Avalanche Rated.
  • Pb-free lead plating and Halogen-free package Symbol MTE011N10RH8 G:Gate D:Drain S:Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Information Device MTE011N10RH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compli.

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Datasheet Details

Part number MTE011N10RH8
Manufacturer Cystech Electonics
File Size 573.42 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE011N10RH8 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C169H8 Issued Date : 2016.07.05 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTE011N10RH8 BVDSS 100V ID@VGS=10V, TC=25°C 45A ID@VGS=10V, TA=25°C 15A RDSON(TYP) VGS=10V, ID=11.5A 9.