MTE130N20F3 Datasheet | Cystech Electonics

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET Spec. No. : C966F3 Issued Date : 2016.12.19 Revised Date : Page No. : 1/ 9 Features - Simple Drive Requirement - Low Gate Charge - Fast Switching Characteristic - RoHS pliant package BVDSS ID @ VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=9A 200V 18A 139 mΩ(typ) Symbol Outline TO-263 G：Gate D：Drain S：Source G DS Ordering Information Device MTE130N20F3-0-T7-X Package Shipping TO-263 (Pb-free lead plating and RoHS pliant package) 800 pcs / Tape & Reel Environment friendly grade : S for RoHS pliant products, G for RoHS pliant and green pound products Packing spec, T7 : 800 pcs /...