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DMG1012UWQ - N-CHANNEL ENHANCEMENT MODE MOSFET

General Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

General Purpose Interfacing Switch Power Management Functions DC-DC Converter

Key Features

  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • ESD Protected.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • The DMG1012UWQ is suitable for automotive.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DMG1012UWQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) Max 0.45Ω @ VGS = 4.5V 0.6Ω @ VGS = 2.5V 0.75Ω @ VGS = 1.8V ID Max TA = +25°C 0.95A 0.82A 0.73A Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.  General Purpose Interfacing Switch  Power Management Functions  DC-DC Converters  Analog Switch Features and Benefits  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.