Click to expand full text
N-Channel 40 V (D-S) MOSFET
DTQ6400-A
www.din-tek.jp
PRODUCT SUMMARY
VDS (V)
RDS(on) (m )(TYP.)
40
0.8 at VGS = 10 V
1.2 at VGS = 4.5 V
ID (A)a, e 200 160
Qg (TYP.) 203 nC
FEATURES • DT-Trench Power MOSFET • 100 % Rg and UIS Tested
APPLICATIONS • Notebook PC Core • VRM/POL
Top View
')1; Bottom View
PIN1
Top View
1
8
2
7
3
6
4
5
D
G S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C ID
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
IDM
Avalanche Current Pulse Single Pulse Avalanche Energy
IAS L = 0.
DTQ6400-A Datasheet
