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N-Channel 40-V (D-S) MOSFET
DTU160N04S
www.din-tek.jp
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
40 0.0021 at VGS = 10 V
ID (A) 160 (Silicon Limited) 120 (Package Limited)
Qg (Typ) 60 nC
D
TO-252
FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU
APPLICATIONS
• OR-ing • Server • DC/DC
G
GDS Top View
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current (Silicon Limited) Continuous Drain Current (TJ = 175 °C)
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
ID
Pulsed Drain Current
IDM
Avalanche Current Pulse Single Pulse Avalanche Energy
L = 0.
DTU160N04S Datasheet
