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N-Channel 250-V (D-S) 175 °C MOSFET
www.din-tek.jp
DTU16N25
PRODUCT SUMMARY
VDS (V) 250 rDS(on) (Ω) 0.165 at VGS = 10 V ID (A) 16
FEATURES
• TrenchFET® Power MOSFET • 175 °C Junction Temperature
RoHS
COMPLIANT
D
TO-252
G
Drain Connected to Tab G D S S N-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 °C)b Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 °C TA = 25 °C TC = 25 °C TC = 125 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 250 ± 20 16 9.8 20 16 5 1.