DMN2008LFU Datasheet (PDF) Download
Diodes Incorporated
DMN2008LFU

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) , yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Key Features

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS pliant (Notes 1 &
  • Halogen and Antimony Free. “Green” Device (Note
  • Mechanical Data
  • Case: U-DFN2030-6 (Type B)
  • Case Material: Molded Plastic, ―Green‖ Molding pound. UL Flammability Classification Rating 94V-0