Datasheet4U Logo Datasheet4U.com

DMN313DLT - N-Channel MOSFET

Datasheet Summary

Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Backlighting DC-DC Converters Power management

Features

  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Lead Free By Design/RoHS Compliant (Note 1).
  • ESD Protected up to 2kV.
  • "Green" Device (Note 2).
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
  • Case: SOT-523.
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0.
  • Moisture Sensitivity: Level.

📥 Download Datasheet

Datasheet preview – DMN313DLT

Datasheet Details

Part number DMN313DLT
Manufacturer DIODES
File Size 129.32 KB
Description N-Channel MOSFET
Datasheet download datasheet DMN313DLT Datasheet
Additional preview pages of the DMN313DLT datasheet.

📁 Similar Datasheet

  • DMN3112S - N-Channel MOSFET (TY Semiconductor)
  • DMN3007LSS - Single N-channel MOSFET (Diodes Incorporated)
  • DMN3009SK3 - N-Channel MOSFET (INCHANGE)
  • DMN3010LK3 - N-Channel MOSFET (INCHANGE)
  • DMN3010LSS - Single N-channel MOSFET (Diodes Incorporated)
  • DMN3016LK3 - N-Channel MOSFET (INCHANGE)
  • DMN3024LK3 - N-Channel MOSFET (INCHANGE)
  • DMN3030LSS - Single N-channel MOSFET (Diodes Incorporated)
  • DMN3031LSS - Single N-channel MOSFET (Diodes Incorporated)
  • DMN3033LDM - N-Channel MOSFET (Diodes Incorporated)
Other Datasheets by Diodes

Full PDF Text Transcription

Click to expand full text
NEW PRODUCT DMN313DLT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) 2Ω @ VGS = 4V 3.2Ω @ VGS = 2.5V ID TA = 25°C 270mA 210mA Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Published: |