DMN3210 Datasheet | Diodes Incorporated

.. N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features - - - - - Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed UNDER DEVELOPMENT SOT-23 A D B G TOP VIEW S C Dim A B C D E G Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0° Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8° Mechanical Data - - - - - - - - Case: SOT-23, Molded Plastic Case material - UL Flammability Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: U0, See Page 5 Weight: 0.008 grams (approx.) Ordering Information, See page 5 H J K L M a Drain Gate All Dimensions in mm Source Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current (Note 3) @ TA = 25°C unless otherwise specified Symbol VDSS VGSS Continuous ID IDM Pd Rq JA Tj, TSTG DMN3210 30 ±12 1.7 15 540 230 -55 to +150 Units V V A A m W °C/W °C Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) t £10s Operating and Storage Temperature Range Note: 1. Per mounting conditions described in Note 2. 2. The value of Rq JA is measured with the device mounted on 1 in2 FR-4 PC board with 2 oz. Copper, in a still air environment at TA = 25°C. The current rating is based on the t £10s Thermal Resistance rating. 3. Repetitive Rating, pulse width limited by junction...