DMN3730U Datasheet | Diodes Incorporated

A Product Line of Diodes Incorporated 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V(BR)DSS 30V Max RDS(on) 460mΩ @ VGS= 4.5V 560mΩ @ VGS= 2.5V ID Max (Note 5) TA = 25°C 0.94A 0.85A Features and Benefits - Low VGS(th), can be driven directly from a battery - Low RDS(on) - “Lead Free”, RoHS pliant (Note 1) - Halogen and Antimony Free. "Green" Device (Note 2) - ESD Protected Gate 2kV - Qualified to AEC-Q101 Standards for High Reliability Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. -...