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A Product Line of Diodes Incorporated
DMN3730U
30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23
Product Summary
V(BR)DSS 30V
Max RDS(on)
460mΩ @ VGS= 4.5V 560mΩ @ VGS= 2.5V
ID Max (Note 5) TA = 25°C 0.94A
0.85A
Features and Benefits
• Low VGS(th), can be driven directly from a battery • Low RDS(on) • “Lead Free”, RoHS Compliant (Note 1) • Halogen and Antimony Free. "Green" Device (Note 2) • ESD Protected Gate 2kV • Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.