DMN3730UFB4 Datasheet | Diodes Incorporated

30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) 460mΩ @ VGS= 4.5V 30V 560mΩ @ VGS= 2.5V ID TA = 25°C 0.9A 0.7A Features and Benefits - - - - - - - - 0.4mm ultra low profile package for thin application 2 0.6mm package footprint, 10 times smaller than SOT23 Low VGS(th), can be driven directly from a battery Low RDS(on) “Lead Free”, RoHS pliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) ESD Protected Gate 2kV Qualified to AEC-Q101 Standards for High Reliability Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for...