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DMN3730UFB4 - 30V N-Channel MOSFET

Description

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Load switch Portable applications Power Management Functions

Features

  • 0.4mm ultra low profile package for thin.

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Full PDF Text Transcription

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DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) 460mΩ @ VGS= 4.5V 30V 560mΩ @ VGS= 2.5V ID TA = 25°C 0.9A 0.7A Features and Benefits • • • • • • • • 0.4mm ultra low profile package for thin application 2 0.6mm package footprint, 10 times smaller than SOT23 Low VGS(th), can be driven directly from a battery Low RDS(on) “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) ESD Protected Gate 2kV Qualified to AEC-Q101 Standards for High Reliability Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
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