Datasheet Summary
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary (Typ @VGS = -4.5V, TA = +25°C)
BVDSS -12V
RDS(ON) 65mΩ
Qg 9nC
Qgd 2.4nC
ID -3.2A
Features and Benefits
- Built-in G-S Protection Diode against ESD 2kV HBM
- Ultra Small 0.8mm x 0.8mm Package
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is a High performance MOSFET in...