ZXMHC3F381N8
ZXMHC3F381N8 is H Bridge manufactured by Diodes Incorporated.
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A Product Line of Diodes Incorporated
30V SO8 plementary enhancement mode MOSFET H-Bridge
Summary
Device V(BR)DSS QG RDS(on) 33mΩ @ VGS= 10V N-CH 30V 9.0n C 60mΩ @ VGS= 4.5V 55mΩ @ VGS= -10V P-CH -30V 12.7n C 80mΩ @ VGS= -4.5V -3.3A 3.9A -4.1A ID TA= 25°C 5.0A
Description
This new generation plementary MOSFET H-Bridge Features low on-resistance achievable with low gate drive.
P1G
P1S/P2S
P2G
Features
- -
2 x N + 2 x P channels in a SOIC package Low voltage (VGS = 4.5 V) gate drive
P1D/N1D
P2D/N2D
Applications
- -
N1G
N2G
DC Motor control DC-AC Inverters
N1S/N2S
Ordering information
Device ZXMHC3F381N8TC Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500
Device marking
ZXMHC 3F381
Issue 1.0
- March 2009
© Diodes Incorporated
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