Datasheet4U Logo Datasheet4U.com

ZXMHC3F381N8 - H Bridge

General Description

This new generation complementary MOSFET H-Bridge

Key Features

  • low on-resistance achievable with low gate drive. P1G P1S/P2S P2G Features.
  • 2 x N + 2 x P channels in a SOIC package Low voltage (VGS = 4.5 V) gate drive P1D/N1D P2D/N2D.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ZXMHC3A01T8 COMPLEMENTARY 30V MOSFET Zetex Semiconductors
ZXMHC10A07T8 COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE Zetex Semiconductors
ZXMHC6A07T8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE Zetex Semiconductors
ZXMHN6A07T8 60V N-CHANNEL MOSFET H-BRIDGE Zetex Semiconductors
ZXM240128A6 Display Module Huizhou City

Other Datasheets by Diodes Incorporated

Part Number Description
ZXMHC3A01N8 MOSFET H-Bridge
ZXMHC3A01T8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE
ZXMHC10A07N8 MOSFET H-Bridge
ZXMHC10A07T8 COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE
ZXMHC6A07N8 MOSFET H-Bridge

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com A Product Line of Diodes Incorporated ZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V(BR)DSS QG RDS(on) 33mΩ @ VGS= 10V N-CH 30V 9.0nC 60mΩ @ VGS= 4.5V 55mΩ @ VGS= -10V P-CH -30V 12.7nC 80mΩ @ VGS= -4.5V -3.3A 3.9A -4.1A ID TA= 25°C 5.0A Description This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive. P1G P1S/P2S P2G Features • • 2 x N + 2 x P channels in a SOIC package Low voltage (VGS = 4.5 V) gate drive P1D/N1D P2D/N2D Applications • • N1G N2G DC Motor control DC-AC Inverters N1S/N2S Ordering information Device ZXMHC3F381N8TC Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500 Device marking ZXMHC 3F381 Issue 1.