ZXMS6006DGQ Datasheet N-Channel MOSFET

Manufacturer: Diodes Incorporated

Overview: Green ZXMS6006DGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET Product Summary  Continuous Drain Source Voltage 60V  On-State Resistance 100m  Nominal Load Current (VIN = 5V) 2.

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ZXMS6006DGQ n-channel mosfet by Diodes Incorporated - Datasheet Preview

Datasheet Details

Part number	ZXMS6006DGQ
Manufacturer	Diodes Incorporated
File Size	600.69 KB
Description	N-Channel MOSFET
Download	ZXMS6006DGQ Download (PDF)

General Description

and Applications The ZXMS6006DGQ is a self protected low side IntelliFETTM MOSFET with logic level input.

It integrates over-temperature, overcurrent, over-voltage (active clamp) and ESD protected logic level functionality.

The ZXMS6006DGQ is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough.

Key Features

Compact High Power Dissipation Package.
Low Input Current.
Logic Level Input (3.3V and 5V).
Short Circuit Protection with Auto Restart.
Over Voltage Protection (Active Clamp).
Thermal Shutdown with Auto Restart.
Over-Current Protection.
Input Protection (ESD).
High Continuous Current Rating.
Lead-Free Finish; RoHS Compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3).
Qualified to AEC-Q101 Standards for High Relia.

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