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ZXMS6006DGQ - N-Channel MOSFET

Description

The ZXMS6006DGQ is a self protected low side IntelliFETTM MOSFET with logic level input.

It integrates over-temperature, overcurrent, over-voltage (active clamp) and ESD protected logic level functionality.

Features

  • Compact High Power Dissipation Package.
  • Low Input Current.
  • Logic Level Input (3.3V and 5V).
  • Short Circuit Protection with Auto Restart.
  • Over Voltage Protection (Active Clamp).
  • Thermal Shutdown with Auto Restart.
  • Over-Current Protection.
  • Input Protection (ESD).
  • High Continuous Current Rating.
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Relia.

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Datasheet preview – ZXMS6006DGQ

Datasheet Details

Part number ZXMS6006DGQ
Manufacturer DIODES
File Size 600.69 KB
Description N-Channel MOSFET
Datasheet download datasheet ZXMS6006DGQ Datasheet
Additional preview pages of the ZXMS6006DGQ datasheet.

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Full PDF Text Transcription

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Green ZXMS6006DGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET Product Summary  Continuous Drain Source Voltage 60V  On-State Resistance 100m  Nominal Load Current (VIN = 5V) 2.8A  Clamping Energy 490mJ Description and Applications The ZXMS6006DGQ is a self protected low side IntelliFETTM MOSFET with logic level input. It integrates over-temperature, overcurrent, over-voltage (active clamp) and ESD protected logic level functionality. The ZXMS6006DGQ is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough. Features and Benefits  Compact High Power Dissipation Package  Low Input Current  Logic Level Input (3.
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