DIM200WBS12-A000 Datasheet | Dynex Semiconductor

FEATURES - - - - 10 µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Baseplate Lead Free construction KEY PARAMETERS VCES VT (typ) IC (max) IC(PK) (max) ± 1200V 4.3 V 200A 400A APPLICATIONS - - - Matrix Converters Brushless Motor Controllers Frequency Converters The Powerline range of high power modules includes half bridge, chopper, dual, single and bidirectional switch configurations covering voltages from 600V to 3300V and currents up to 3600A. The DIM200WBS12-A000 is a bi-directional 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. Fig. 1 Half bridge circuit diagram ORDERING INFORMATION Order As: DIM200WBS12-A000 Note: When ordering, please use the whole part number. Outline type code: W (See package details for further information) Fig. 2 Module outline . Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10 .dynexsemi. .. SEMICONDUCTOR ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25° C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax It Visol Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Diode I t value (IGBT arm) Isolation voltage - per module Test Conditions VGE = 0V Max. 1200...