DIM200WHS17-A000 - Half Bridge IGBT Module

Features

I I I 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Base Plate KEY.

Dynex Semiconductor

Datasheet Details

Part number	DIM200WHS17-A000
Manufacturer	Dynex Semiconductor
File Size	182.09 KB
Description	Half Bridge IGBT Module
Datasheet	DIM200WHS17-A000 Datasheet
Additional preview pages of the DIM200WHS17-A000 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com DIM200WHS17-A000 DIM200WHS17-A000 Half Bridge IGBT Module Replaces issue December 2003, version FDS5673-2.3 FDS5673-3.0 January 2004 FEATURES I I I 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Base Plate KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK) 1700V 2.7V 200A 400A *(measured at the power busbars and not the auxiliary terminals) APPLICATIONS I I I Inverters Motor Controllers Induction Heating 7(E2) 6(G2) The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 3600A. The DIM200WHS17-A000 is a half bridge 1700V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module.

Published: Jan 13, 2007 |