DIM200WHS12-E000
DIM200WHS12-E000 is Half Bridge IGBT Module manufactured by Dynex Semiconductor.
FEATURES
Trench Gate Field Stop Technology Low Conduction Losses Low Switching Losses 10µs Short Circuit Withstand
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1200V 1.7V 200A 400A
APPLICATIONS
Motor Drives Wind Turbines UPS Systems
7(E2) 6(G2)
1(E1C2)
2(E2)
3(C1)
The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 3600A. The DIM200WHS12-E000 is a half bridge 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
4(G1) 5(E1)
Fig. 1 Half bridge circuit diagram
ORDERING INFORMATION
Order As: DIM200WHS12-E000 Note: When ordering, please use the plete part number.
Outline type code: W (See package details for further information) Fig. 2 Module Outline
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/8
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ABSOLUTE MAXIMUM RATINGS
- PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax I2t Visol Qpd Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Diode I2t value Isolation voltage
- per module Partial discharge
- per module Tcase = 70˚C 1ms,...
