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DIM200WHS12-E000
DIM200WHS12-E000
Half Bridge IGBT Module
PDS5684-1.2 January 2004
FEATURES
I I I I
Trench Gate Field Stop Technology Low Conduction Losses Low Switching Losses 10µs Short Circuit Withstand
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1200V 1.7V 200A 400A
APPLICATIONS
I I I
Motor Drives Wind Turbines UPS Systems
7(E2) 6(G2)
1(E1C2)
2(E2)
3(C1)
The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 3600A. The DIM200WHS12-E000 is a half bridge 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module.
DIM200WHS12-E000 Datasheet
