Datasheet4U Logo Datasheet4U.com

GP1600FSM12 - Single Switch IGBT Module Advance Information

Key Features

  • s s s s KEY.

📥 Download Datasheet

Datasheet Details

Part number GP1600FSM12
Manufacturer Dynex Semiconductor
File Size 139.24 KB
Description Single Switch IGBT Module Advance Information
Datasheet download datasheet GP1600FSM12 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
GP1600 (GP1xxx) High Voltage Diode Rectifiers Diotec Electronics
GP1601 16.0 Ampere Dual Common Cathode General Purpose Rectifier Diodes Thinki Semiconductor
GP1601 Glass Passivated Rectifiers Taiwan Semiconductor
GP1602 16.0 Ampere Dual Common Cathode General Purpose Rectifier Diodes Thinki Semiconductor
GP1602 Glass Passivated Rectifiers Taiwan Semiconductor

Other Datasheets by Dynex Semiconductor

Part Number Description
GP1600FSM18 Hi-Reliability Single Switch IGBT Module
GP1600FSS12 Powerline N-Channel Single Switch IGBT Module Advance Information
GP1600FSS18 Single Switch IGBT Module
GP1601FSS18 Single Switch Low VCE(SAT) IGBT Module
GP1200ESM33 High Reliability Single Switch IGBT Module Advance Information

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GP1600FSM12 GP1600FSM12 Single Switch IGBT Module Advance Information DS5451-1.2 October 2001 FEATURES s s s s KEY PARAMETERS VCES VCE(sat) IC IC(PK) (typ) 1200V 2.7V (max) 1600A (max) 3200A High Thermal Cycling Capability 1600A Per Module Non Punch Through Silicon Isolated MMC Base with AlN Substrates APPLICATIONS s s s s External connection C1 Aux C C2 High Reliability Inverters Motor Controllers Traction Drives Resonant Converters G The Powerline range of high power modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The GP1600FSM12 is a singlel switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module.