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GP1601FSS18 - Single Switch Low VCE(SAT) IGBT Module

Key Features

  • s s s s s Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 1600A Per module KEY.

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Datasheet Details

Part number GP1601FSS18
Manufacturer Dynex Semiconductor
File Size 124.40 KB
Description Single Switch Low VCE(SAT) IGBT Module
Datasheet download datasheet GP1601FSS18 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GP1601FSS18 GP1601FSS18 Single Switch Low VCE(SAT) IGBT Module Replaces January 2000 version, DS5248-3.0 DS5248-4.2 January 2001 FEATURES s s s s s Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 1600A Per module KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 2.6V 1600A 3200A External connection APPLICATIONS s s s s C1 Aux C C2 High Reliability Inverters Motor Controllers Traction Drives Resonant Converters G Aux E E1 E2 The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP1601FSS18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module.