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GP1200ESM33
GP1200ESM33
High Reliability Single Switch IGBT Module Advance Information
Replaces July 2000 version, DS5308-1.6 DS5308-2.1 February 2001
FEATURES
s s s
High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
3300V 3.4V 1200A 2400A
APPLICATIONS
s s s s
High Reliability Inverters C1 Motor Controllers Traction Drives Resonant Converters Aux C
External connection C2 C3
The Powerline range of high power modules includes dual and single switch configurations covering voltages from 1200V to 3300V and currents up to 4800A. The GP1200ESM33 is a single switch 3300V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module.
GP1200ESM33 Datasheet
