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GP1200FSM18 - Hi-Reliability Single Switch IGBT Module

Key Features

  • s s s s High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates 1200A Per Module KEY.

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Datasheet Details

Part number GP1200FSM18
Manufacturer Dynex Semiconductor
File Size 125.80 KB
Description Hi-Reliability Single Switch IGBT Module
Datasheet download datasheet GP1200FSM18 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GP1200FSM18 GP1200FSM18 Hi-Reliability Single Switch IGBT Module DS5410-1.2 January 2001 FEATURES s s s s High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates 1200A Per Module KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 3.5V 1200A 2400A APPLICATIONS s s s s External connection C1 Aux C C2 High Reliability Inverters Motor Controllers Traction Drives Resonant Converters G The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP1200FSM18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module.