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GP1201FSS18 - Single Switch Low V IGBT Module

Key Features

  • s s s s s Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 1200A Per Module KEY.

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Datasheet Details

Part number GP1201FSS18
Manufacturer Dynex Semiconductor
File Size 127.62 KB
Description Single Switch Low V IGBT Module
Datasheet download datasheet GP1201FSS18 Datasheet

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GP1201FSS18 GP1201FSS18 Single Switch Low VCE(SAT) IGBT Module DS5411-1.1 January 2001 FEATURES s s s s s Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 1200A Per Module KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 2.6V 1200A 2400A External connection APPLICATIONS s s s s C1 Aux C C2 High Reliability Inverters Motor Controllers Traction Drives Resonant Converters G Aux E E1 E2 The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP1201FSS18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module.