Datasheet4U Logo Datasheet4U.com

GP1200FSS18 - Single Switch IGBT Module

Key Features

  • s s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 1200A Per Module KEY.

📥 Download Datasheet

Datasheet Details

Part number GP1200FSS18
Manufacturer Dynex Semiconductor
File Size 132.84 KB
Description Single Switch IGBT Module
Datasheet download datasheet GP1200FSS18 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
GP1200 (GP1xxx) High Voltage Diode Rectifiers Diotec Electronics
GP120 PPTC Thermistors Goodpoly
GP1202B02A VACUUM FLUORESCENT DISPLAY MODULE Futaba
GP1202B02B VACUUM FLUORESCENT DISPLAY MODULE Futaba
GP1202B02C VACUUM FLUORESCENT DISPLAY MODULE Futaba

Other Datasheets by Dynex Semiconductor

Part Number Description
GP1200FSM18 Hi-Reliability Single Switch IGBT Module
GP1200ESM33 High Reliability Single Switch IGBT Module Advance Information
GP1201FSS18 Single Switch Low V IGBT Module
GP1600FSM12 Single Switch IGBT Module Advance Information
GP1600FSM18 Hi-Reliability Single Switch IGBT Module

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GP1200FSS18 GP1200FSS18 Single Switch IGBT Module Replaces February 2000 version, DS5260-2.0 DS5260-3.1 January 2001 FEATURES s s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 1200A Per Module KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 3.5V 1200A 2400A APPLICATIONS s s s s External connection C1 Aux C C2 High Power Inverters Motor Controllers Induction Heating Resonant Converters G The powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP1200FSS18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module.