GP1200FSS18 Datasheet | Dynex Semiconductor

Single Switch IGBT Module Replaces February 2000 version, DS5260-2.0 DS5260-3.1 January 2001 Features s s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 1200A Per Module KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 3.5V 1200A 2400A APPLICATIONS s s s s External connection C1 Aux C C2 High Power Inverters Motor Controllers Induction Heating Resonant Converters The powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP1200FSS18 is a single switch 1800V, n channel enhancement mode, insulated gate...