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GP1600FSS18 - Single Switch IGBT Module

Key Features

  • s s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 1600A Per Module KEY.

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Datasheet Details

Part number GP1600FSS18
Manufacturer Dynex Semiconductor
File Size 127.11 KB
Description Single Switch IGBT Module
Datasheet download datasheet GP1600FSS18 Datasheet

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Full PDF Text Transcription (Reference)

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GP1600FSS18 GP1600FSS18 Single Switch IGBT Module Replaces January 2000 version, DS5136-3.0 DS5176-4.2 January 2001 FEATURES s s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 1600A Per Module KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 3.5V 1600A 3200A APPLICATIONS External connection s s s s High Power Inverters Motor Controllers Induction Heating Resonant Converters G Aux C C1 C2 The powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP1600FSS18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module.