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GP800FSS12 - Powerline N-Channel Single Switch IGBT Module Preliminary Information

Datasheet Summary

Features

  • s s s s s s s (See package details for further information) Fig. 1 Electrical connections - (not to scale) 3/4(E) n - Channel Enhancement Mode High Input Impedance Optimised For High Power High Frequency Operation Isolated Base Full 1200V Capability 800A Per Module 8(E1) 9(G1) 1/2(C) 7(C1) Fig.2 Single switch circuit diagram.

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Datasheet Details

Part number GP800FSS12
Manufacturer Dynex Semiconductor
File Size 89.13 KB
Description Powerline N-Channel Single Switch IGBT Module Preliminary Information
Datasheet download datasheet GP800FSS12 Datasheet
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GP800FSS12 GP800FSS12 Powerline N-Channel Single Switch IGBT Module Preliminary Information Replaces October 1999 version, DS5239-2.0 DS5239-3.0 January 2000 The GP800FSS12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate drive considerations enabling operation directly from low power control circuitry. Fast switching times allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching.
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