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GP800FSS18 - Singles Switch IGBT Module

Key Features

  • s s s s s Non Punch Through Silicon Isolated Copper Baseplate With Al2O3 Substrate Low Inductance Internal Construction Full 1800V Rating 800A Per Module KEY.

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Datasheet Details

Part number GP800FSS18
Manufacturer Dynex Semiconductor
File Size 140.74 KB
Description Singles Switch IGBT Module
Datasheet download datasheet GP800FSS18 Datasheet

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GP800FSS18 GP800FSS18 Singles Switch IGBT Module Replaces January 2000 version, DS5261-2.0 DS5261-3.1 January 2001 FEATURES s s s s s Non Punch Through Silicon Isolated Copper Baseplate With Al2O3 Substrate Low Inductance Internal Construction Full 1800V Rating 800A Per Module KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 3.5V 800A 1600A External connection APPLICATIONS s s s s C1 Aux C C2 High Power Inverters Motor Controllers Induction Heating Resonant Converters G Aux E E1 E2 The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP800FSS18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module.