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GP801DCS18 - Chopper Switch Low VCESAT IGBT Module

Features

  • s s s s s Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 800A Per Module KEY.

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Datasheet Details

Part number GP801DCS18
Manufacturer Dynex Semiconductor
File Size 169.60 KB
Description Chopper Switch Low VCESAT IGBT Module
Datasheet download datasheet GP801DCS18 Datasheet

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Full PDF Text Transcription

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GP801DCS18 GP801DCS18 Chopper Switch Low VCE(SAT) IGBT Module DS5235-3.0 January 2001 FEATURES s s s s s Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 800A Per Module KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 2.6V 800A 1600A APPLICATIONS s s s s s High Reliability Inverters Motor Controllers Traction Drives Resonant Converters Choppers 2(C2) 4(E2) 1(E1) 7(C1) 5(E1) 6(G1) 3(C1) The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP801DCS18 is an 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module.
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