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GP801FSM18 - Hi-Reliability Single Switch Low VCE(SAT) IGBT Module

Features

  • s s s s s Low VCE(SAT) 800A Per Switch High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates KEY.

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Datasheet Details

Part number GP801FSM18
Manufacturer Dynex Semiconductor
File Size 141.97 KB
Description Hi-Reliability Single Switch Low VCE(SAT) IGBT Module
Datasheet download datasheet GP801FSM18 Datasheet

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GP801FSM18 GP801FSM18 Hi-Reliability Single Switch Low VCE(SAT) IGBT Module DS5401-1.1 January 2001 FEATURES s s s s s Low VCE(SAT) 800A Per Switch High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 2.6V 800A 1600A External connection APPLICATIONS Aux C s s s s C1 C2 High Reliability Motor Controllers Traction Drives Low Loss System Retrofit G Aux E E1 E2 The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP801FSM18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module.
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