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GP801DDS18 - Dual Switch Low VCE(SAT) IGBT Module

Features

  • s s s s s Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 800A Per Arm KEY.

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Datasheet Details

Part number GP801DDS18
Manufacturer Dynex Semiconductor
File Size 143.04 KB
Description Dual Switch Low VCE(SAT) IGBT Module
Datasheet download datasheet GP801DDS18 Datasheet

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Full PDF Text Transcription

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GP801DDS18 GP801DDS18 Dual Switch Low VCE(SAT) IGBT Module Replaces January 2000 version, DS235-3.0 DS5235-4.1 January 2001 FEATURES s s s s s Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 800A Per Arm KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 2.6V 800A 1600A APPLICATIONS s s s s 12(C2) 2(C2) 4(E2) 1(E1) 7(C ) 1 11(G2) 10(E2) 3(C1) 5(E1) 6(G1) High Reliability Inverters Motor Controllers Traction Drives Resonant Converters The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP801DDS18 is a dual switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module.
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