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GP801DDM18 - Hi-Reliability Dual Switch Low VCESAT IGBT Module

Features

  • s s s s s Low VCE(SAT) 800A Per Switch High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates KEY.

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Datasheet Details

Part number GP801DDM18
Manufacturer Dynex Semiconductor
File Size 142.50 KB
Description Hi-Reliability Dual Switch Low VCESAT IGBT Module
Datasheet download datasheet GP801DDM18 Datasheet

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Full PDF Text Transcription

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GP801DDM18 GP801DDM18 Hi-Reliability Dual Switch Low VCE(SAT) IGBT Module Replaces October 2000, version DS5292-2.5 DS5292-3.0 January 2001 FEATURES s s s s s Low VCE(SAT) 800A Per Switch High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 2.6V 800A 1600A APPLICATIONS s s s s High Reliability Motor Controllers Traction Drives Low Loss System Retrofit 12(C2) 2(C2) 4(E2) 1(E1) 7(C1) 11(G2) 10(E2) 3(C1) 5(E1) 6(G1) The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP801DDM18 is a dual switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module.
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