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CESD1006NC5VB - ESD Protection Diode

Key Features

  • 60Watts peak pulse power (tp = 8/20us).
  • DFN1006 package.
  • Bidirectional configurations.
  • Solid-state silicon-avalanche technology.
  • Low clamping voltage.
  • Low leakage current.
  • Medium capacitance (CJ=6pF typ. ).
  • Protection one data/power line to: IEC 61000-4-2 ±8kV contact ±15kV air IEC 61000-4-4 (EFT) 40A (5/50ns) IEC 61000-4-5 (Lightning) 6A (8/20μs).

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Full PDF Text Transcription (Reference)

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ESD Protection Diode in DFN1006 CESD1006NC5VB Features ◆60Watts peak pulse power (tp = 8/20us) ◆DFN1006 package ◆Bidirectional configurations ◆Solid-state silicon-avalanche technology ◆Low clamping voltage ◆Low leakage current ◆Medium capacitance (CJ=6pF typ.) ◆Protection one data/power line to: IEC 61000-4-2 ±8kV contact ±15kV air IEC 61000-4-4 (EFT) 40A (5/50ns) IEC 61000-4-5 (Lightning) 6A (8/20μs) Applications ◆Audio Line, Speaker, Headset, Microphone Protection ◆Human Interface Devices (Keyboard, Touchpad, Buttons) Mechanical Data ◆Case: DFN1006 (plastic package).Lead free; RoHS compliant ◆Molding Compound Flammability Rating:UL 94 V-0 ◆Terminals: High temperature soldering guaranteed:260 °C/10 sec.