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CESD1006NC5VB Datasheet Esd Protection Diode

Manufacturer: E-CMOS

Overview: ESD Protection Diode in DFN1006 CESD1006NC5VB.

Key Features

  • 60Watts peak pulse power (tp = 8/20us).
  • DFN1006 package.
  • Bidirectional configurations.
  • Solid-state silicon-avalanche technology.
  • Low clamping voltage.
  • Low leakage current.
  • Medium capacitance (CJ=6pF typ. ).
  • Protection one data/power line to: IEC 61000-4-2 ±8kV contact ±15kV air IEC 61000-4-4 (EFT) 40A (5/50ns) IEC 61000-4-5 (Lightning) 6A (8/20μs).

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