CESD1006NC5VB
CESD1006NC5VB is ESD Protection Diode manufactured by E-CMOS.
Features
- 60Watts peak pulse power (tp = 8/20us)
- DFN1006 package
- Bidirectional configurations
- Solid-state silicon-avalanche technology
- Low clamping voltage
- Low leakage current
- Medium capacitance (CJ=6p F typ.)
- Protection one data/power line to:
IEC 61000-4-2 ±8k V contact ±15k V air IEC 61000-4-4 (EFT) 40A (5/50ns) IEC 61000-4-5 (Lightning) 6A (8/20μs)
Applications
- Audio Line, Speaker, Headset, Microphone Protection
- Human Interface Devices (Keyboard, Touchpad, Buttons)
Mechanical Data
- Case: DFN1006 (plastic package).Lead free; Ro HS pliant
- Molding pound Flammability Rating:UL 94 V-0
- Terminals: High temperature soldering guaranteed:260 °C/10 sec. at terminals
Absolute Maximum Ratings
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Symbol
Value
Unit
Peak Pulse Power (TP=8/20μS)
ESD contact/air discharge (IEC-61000-4-2)
VESD
8/15 k V
Peak Pulse Current ( t P = 8/20μS )
Junction Temperature
-55 to +125
℃
Storage temperature
TSTG
-55 to +150
℃
Ordering/Mark information
CES D1006 NC 5V...
