CESD2510LC5VU Datasheet | E-CMOS

Features - 80Watts peak pulse power (Tp = 8/20μs) - DFN2510 Package - Unidirectional configurations - Solid-state silicon-avalanche technology - Low clamping voltage - Low leakage current - Low capacitance (0.3p F typical I/O to I/O) - ESD Protection for high-speed data lines to: IEC 61000-4-2 ±15KV contact ±15KV air IEC 61000-4-4 (EFT) 40A (5/50ns) IEC 61000-4-5 (Lightning) 5A (8/20μs) Applications - USB 3.0, USB 2.0, MHL - HDMI 2.0, Display Port 1.3, e SATA - Unified Display Interface (UDI) - Digital Visual Interface (DVI) - High speed serial interfaces Mechanical Data - Case: DFN2510 (plastic package). Lead free; Ro HS pliant; Halogen free - Molding pound Flammability Rating: UL 94 V-0 - Terminals: High temperature soldering guaranteed: 260 °C/10 sec. at terminals E-CMOS Corp. (.ecmos..tw) Page 1 of 5 1I09N-Rev.F001 Low Capacitance ESD TVS Array in DFN2510 CESD2510LC5VU Ordering Information Absolute Maximum Ratings Ratings at 25 °C, ambient temperature unless otherwise specified Electrical Characteristics (TA = 25 °C unless otherwise specified) E-CMOS Corp. (.ecmos..tw) Page 2 of 5 1I09N-Rev.F001 Low Capacitance ESD TVS Array in DFN2510 CESD2510LC5VU Typical Characteristics (Tamb = 25 °C unless otherwise specified) E-CMOS Corp. (.ecmos..tw) Page 3 of 5 1I09N-Rev.F001 Low Capacitance ESD TVS Array in DFN2510 CESD2510LC5VU Package Dimensions Pad...