1SS352 Datasheet | EIC Semiconductor

.eicsemi. SILICON EPITAXIAL HIGH SPEED SWITCHING DIODE Features : - Small plastic package suitable for surface mounted design - High Speed (Trr = 1.6 ns Typ.) - Low forward voltage ( VF = 0.98 Typ.) - Small total capacitance (CT = 0.5 p F Typ.) - Pb / Ro HS Free SOD-323 1.80 1.60 APPLICATIONS - High speed switching DESCRIPTION - Silicon planar zener diode in a small plastic SMD SOD-323 package 2.80 2.30 Dimensions in millimeters Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.) Parameter Maximum peak reverse voltage Maximum DC reverse voltage Maximum average forward current Maximum peak forward current Maximum power dissipation Maximum surge current (10ms) Operating junction temperature Storage temperature range Symbol VRRM VRM IF IFM PD IFSM TJ TSTG Note : (1) Mounted on a glass epoxy circuit board of 20 x 20 mm,pad dimension of 4 x 4 Value 85 80 100 200 200(1) 1.0 125 -55 to + 125 Unit V V m A m A m W A °C °C Electrical Characteristics (Ta = 25°C unless otherwise noted) Parameter Forward...