ELM4N0004FDA-N
ELM4N0004FDA-N is Single N-channel MOSFET manufactured by ELM.
description
ELM4N0004FDA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage. https://.elm-tech.
- Features
- Vds=100V
- Id=12A (Vgs=10V)
- Rds(on) = 112mΩ (Vgs=10V)
- Rds(on) = 120mΩ (Vgs=4.5V)
- Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Tc=25°C
Continuous drain current (Vgs=10V)
Tc=100°C Ta=25°C
Ta=70°C
Pulsed drain current
Single pulsed avalanche energy
Avalanche current
Total power dissipation
Tc=25°C Ta=25°C
Storage temperature range
Operating junction temperature range
Symbol Vds Vgs
Id
Idm Eas Ias Pd Tstg Tj
Limit 100 ±20 12.0 7.7 3.0 2.4 24 6.1 11.0 34.7 2.0 -55 to +150 -55 to +150
Unit
Note
2 m J
°C °C
- Thermal characteristics
Parameter Thermal resistance junction-ambient Thermal resistance junction-case
Symbol Typ.
Rθja
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