ELM4N0008FUA-S
ELM4N0008FUA-S is Single N-channel MOSFET manufactured by ELM.
description
ELM4N0008FUA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage. https://.elm-tech.
- Features
- Vds=100V
- Id=2.2A
- Rds(on) = 310mΩ (Vgs=10V)
- Rds(on) = 320mΩ (Vgs=4.5V)
- Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current (Vgs=10V)
Ta=25°C Ta=70°C
Pulsed drain current
Total power dissipation
Ta=25°C
Storage temperature range
Operating junction temperature range
Symbol Vds Vgs
Id
Idm Pd Tstg Tj
Limit 100 ±20 2.2 1.7 5.5 1.5 -55 to 150 -55 to 150
Unit
Note
°C
°C
- Thermal characteristics
Parameter Thermal resistance junction-ambient Thermal resistance junction-case
Symbol Typ.
Rθja
- Rθjc
- Max. 85 36
Unit Note
°C/W
°C/W...
