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ELM4N0006FUA-S - Single N-channel MOSFET

Description

ELM4N0006FUA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage.

Features

  • Vds=100V.
  • Id=3A (Vgs=10V).
  • Rds(on) = 75mΩ (Vgs=10V).
  • Rds(on) = 82mΩ (Vgs=4.5V).
  • Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (Vgs=10V) Ta=25°C Ta=70°C Pulsed drain current Total power dissipation Ta=25°C Storage temperature range Operating junction temperature range Symbol Vds Vgs Id Idm Pd Tstg Tj Limit 100 ±20 3.0 2.4 15 2 -55 to 150 -55 to 150 Unit Note V V A 1 A 2 W 3 °C.

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Datasheet Details

Part number ELM4N0006FUA-S
Manufacturer ELM
File Size 545.80 KB
Description Single N-channel MOSFET
Datasheet download datasheet ELM4N0006FUA-S Datasheet
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Single N-channel MOSFET ELM4N0006FUA-S ■General description ELM4N0006FUA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage. https://www.elm-tech.com ■Features • Vds=100V • Id=3A (Vgs=10V) • Rds(on) = 75mΩ (Vgs=10V) • Rds(on) = 82mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (Vgs=10V) Ta=25°C Ta=70°C Pulsed drain current Total power dissipation Ta=25°C Storage temperature range Operating junction temperature range Symbol Vds Vgs Id Idm Pd Tstg Tj Limit 100 ±20 3.0 2.
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