EPC EPC2037
Power Transistor
| Part No. | EPC2037 |
|---|---|
| Datasheet | EPC2037 Download |
| Manufacturer |  EPC |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
PARAMETER VALUE UNIT Drain-to-Source Voltage (Continuous) 100 VDS Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C) 120 V ID Continuous (TA = 25°C, RθJA = 44°C/W) Pulsed (25°C, TPULSE = 300 µs) Gate-to-Source Voltage VGS Gate-to-Source Voltage 1.7 A 2.4 6 V –4 TJ Operating Temperature TSTG Storage Temperature –40 to 150 °C –40 to 150 Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction-to-Case 14 RθJB Thermal Resistance, Junction-to-Board 79 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 100 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See for details EPC2037 eGaN® FETs are supplied only in passivated die form with solder bumps. Die size: 0.9 mm x 0.9 mmAPPLICATIONS
● High Speed DC-DC Conversion● Wireless Power Transfer
● Lidar/Pulsed Power
APPLICATIONS
● Class-D Audio Benefits● Ultra High Efficiency
● Ultra Low RDS(on)
● Ultra Low QG
● Ultra S...
