EPC EPC2038
Power Transistor
| Part No. | EPC2038 |
|---|---|
| Datasheet | EPC2038 Download |
| Manufacturer |  EPC |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
PARAMETER VALUE UNIT Drain-to-Source Voltage (Continuous) 100 VDS V Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C) 120 Continuous (TA = 25°C, RθJA = 100°C/W) ID Pulsed (25°C, TPULSE = 300 µs) VGS Gate-to-Source Voltage TJ Operating Temperature TSTG Storage Temperature 0.5 A 0.5 6 V -40 to 150 °C -40 to 150 Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction-to-Case 27 RθJB Thermal Resistance, Junction-to-Board 91 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 100 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See for details. EPC2038 eGaN® FETs are supplied only in passivated die form with solder bumps. Die size: 0.9 mm x 0.9 mmAPPLICATIONS
Synchronous Bootstrap for:● High Speed DC-DC Conversion
● Wireless Power Transfer
● High Frequency Hard-Switching and Soft-Switching Circuits
● Lidar/Pulsed Power
APPLICATIONS
● Class-D Audio Benefits● Ult...
