EPC2038 Overview
eGaN® FET DATASHEET EPC2038 Enhancement Mode Power Transistor with Integrated Reverse Gate Clamp Diode VDS , 100 V RDS(on) , 3300 mΩ ID , 0.5 A D G S EPC2038 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end...