EPC EPC2039
Power Transistor
| Part No. | EPC2039 |
|---|---|
| Datasheet | EPC2039 Download |
| Manufacturer |  EPC |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
PARAMETER VALUE UNIT Drain-to-Source Voltage (Continuous) 80 VDS Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C) 96 V ID Continuous (TA = 25°C, RθJA = 70°C/W) Pulsed (25°C, TPULSE = 300 µs) Gate-to-Source Voltage VGS Gate-to-Source Voltage TJ Operating Temperature TSTG Storage Temperature 6.8 A 50 6 V –4 –40 to 150 °C –40 to 150 Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction-to-Case 3 RθJB Thermal Resistance, Junction-to-Board 28 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 81 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See for details EPC2039 eGaN® FETs are supplied only in passivated die form with solder bumps Die Size: 1.35 mm x 1.35 mmAPPLICATIONS
● High Speed DC-DC conversion● Wireless Power Transfer
● Lidar/Pulsed Power
APPLICATIONS
Benefits● Ultra High Efficiency
● Ultra Low RDS(on)
● Ultra Low QG
● Ultra Small Footprint PARAM...
